Title:
イオン注入装置及び汚染観測方法
Document Type and Number:
Japanese Patent JP3751714
Kind Code:
B2
Abstract:
High energy neutral contamination in an ion implanter can be caused by beam ions neutralised as they are temporarily accelerated at an electrode before being decelerated again to the desired implant energy. This occurs for example in the decel lens arrangement which includes an electrode at a relatively high negative potential to provide the required focusing. The level of this contamination is monitored by measuring the current drain on this negative field electrode.
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Inventors:
Babaku Adibi
Jonathan Gerald England
Stefan Moffat
Jose Antonio Marin
Jonathan Gerald England
Stefan Moffat
Jose Antonio Marin
Application Number:
JP15515797A
Publication Date:
March 01, 2006
Filing Date:
June 12, 1997
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01J37/317; H01L21/265
Domestic Patent References:
| JP4206133A | ||||
| JP6036739A | ||||
| JP6139993A | ||||
| JP7211279A | ||||
| JP7211497A | ||||
| JP10027568A | ||||
| JP62040369A |
Foreign References:
| WO1997017716A1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Yuichi Yamada
Okimoto Kazuaki
Tatsuya Shioda
Shiro Terasaki
Yuichi Yamada
Okimoto Kazuaki
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