半導体装置及びその製造方法

Title:

半導体装置及びその製造方法

Document Type and Number:

Japanese Patent JP4342854

Kind Code:

B2

Abstract:

A semiconductor device includes: a semiconductor substrate; a first wiring formed above the semiconductor substrate with a first insulating film interposed therebetween; an MIM capacitor formed above the first insulating film; a second insulating film formed to cover the MIM capacitor; a second wiring formed on the second insulating film; and a guard ring buried in the second insulating film to surround the MIM capacitor.

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Inventors:

Kazutaka Akiyama

Application Number:

JP2003194419A

Publication Date:

October 14, 2009

Filing Date:

July 09, 2003

Export Citation:

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Assignee:

Toshiba Corporation

International Classes:

H01L21/822; H01L23/52; H01L21/02; H01L21/3205; H01L21/768; H01L23/522; H01L23/532; H01L23/58; H01L27/04; H01L27/08

Domestic Patent References:

JP2003017575A
JP2002134506A
JP2002367996A

Attorney, Agent or Firm:

Masaru Itami

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