Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4357434
Kind Code:
B2
Abstract:
A manufacturing method of a semiconductor device, comprising providing a low-relative-dielectric-constant film above a substrate containing at least oxygen and having a relative dielectric constant of 3.3 or more, a conductor being to be buried in the film, performing a plasma processing by discharging a gas containing a noble gas as a main component to the film, the plasma processing being executed while the substrate above which the film is provided is storing in a processing chamber having an inside covered with a material composed of an element except for oxygen and substantially set under an oxygen-free atmosphere, and providing a first insulating film above the low-relative-dielectric-constant film by a plasma CVD method, being made of a material containing at least one of a material containing oxygen and a material containing an element reacting with oxygen, a conductor being to be buried in the first insulating film.
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Inventors:
Hidefumi Miyajima
Masuda Hideo
Tsutomu Shimayama
Shunichi Shibuki
Masuda Hideo
Tsutomu Shimayama
Shunichi Shibuki
Application Number:
JP2005050939A
Publication Date:
November 04, 2009
Filing Date:
February 25, 2005
Export Citation:
Assignee:
株式会社東芝
ソニー株式会社
ソニー株式会社
International Classes:
H01L21/768
Domestic Patent References:
| JP2004207604A | ||||
| JP2004193162A | ||||
| JP2003309173A | ||||
| JP2004273483A | ||||
| JP2004119872A | ||||
| JP2004253790A |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto