Title:
記憶装置
Document Type and Number:
Japanese Patent JP5089074
Kind Code:
B2
Abstract:
To provide an involatile memory device that is capable of writing and erasing data at a time other than during manufacturing, and a semiconductor device having the memory device.
The memory device has a pair of conductive layers and an organic compound interposed between the pair of conductive layers, wherein the organic compound has a liquid crystal property. Data is recorded in the memory device by applying a first voltage to the pair of conductive layers and heating the organic compound to cause a phase change of the organic compound from a first phase to a second phase.
COPYRIGHT: (C)2007,JPO&INPIT
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Inventors:
Nobuharu Osawa
Application Number:
JP2006112082A
Publication Date:
December 05, 2012
Filing Date:
April 14, 2006
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L27/28; G11C13/00; H01L27/105; H01L51/05
Domestic Patent References:
| JP5054685A | ||||
| JP2001291594A | ||||
| JP2002170685A | ||||
| JP2000207770A | ||||
| JP6275801A | ||||
| JP2004304179A | ||||
| JP61280046A | ||||
| JP2005285445A |