To provide a method for manufacturing a CIS-based thin film solar cell with high production efficiency by which a high-resistance buffer layer of the CIS-based solar cell can be efficiently manufactured through a series of production lines and waste liquid need not be treated.
The method for manufacturing the CIS-based solar cell includes the processes of: manufacturing a back electrode on a substrate; forming a p-type CIS-based light absorbing layer on the back electrode; forming a buffer layer of a zinc-oxide-based thin film directly on the p-type CIS-based light absorbing layer; and forming an n-type transparent conductive film of a zinc-oxide-based thin film on the buffer layer, wherein the buffer layer filming process is carried out by an MOCVD method and the substrate temperature in the buffer layer film forming process is made higher than the substrate temperature during film formation of the n-type transparent conductive film layer.
COPYRIGHT: (C)2009,JPO&INPIT
Katsuya Tabuchi
Yousuke Fujiwara
Kushiya Katsumi
| JP2006525671A | ||||
| JP11340489A |