Title:
イオン注入システムのための、金属汚染が微量に低減されたイオン源
Document Type and Number:
Japanese Patent JP6469700
Kind Code:
B2
Abstract:
An ion source chamber for ion implantation system includes a housing that at least partially bounds an ionization region through which high energy electrons move from a cathode to ionize gas molecules injected into an interior of the housing; a liner section defining one or more interior walls of the housing interior, wherein each liner section includes a interiorly facing surface exposed to the ionization region during operation the ion implantation system; a cathode shield disposed about the cathode; a repeller spaced apart from the cathode; a plate including a source aperture for discharging ions from the ion source chamber; wherein at least one of the repeller, the liner section, the cathode shield; the plate, or an insert in the plate defining the source aperture comprise silicon carbide, wherein the silicon carbide is a non-stoichiometric sintered material having excess carbon.
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Inventors:
Che, Tse Jen
Neil Corvin
Neil Corvin
Application Number:
JP2016541354A
Publication Date:
February 13, 2019
Filing Date:
December 19, 2014
Export Citation:
Assignee:
AXCELIS TECHNOLOGIES, INC.
International Classes:
H01J37/08; H01J37/16; H01J37/317
Domestic Patent References:
| JP10083787A | ||||
| JP2009515301A | ||||
| JP9508178A |
Foreign References:
| WO2012048256A1 |
Attorney, Agent or Firm:
Harakenzo world patent & trademark