Title:
炭化ケイ素前駆体からのバルクの炭化ケイ素の製造方法及び装置
Document Type and Number:
Japanese Patent JP6887174
Kind Code:
B2
Abstract:
A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.
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Inventors:
Dorachev, Roman Vie.
Santana Lagavan, Parta Salati
Andrukiv, Andrie M.
Lytle, David S.
Santana Lagavan, Parta Salati
Andrukiv, Andrie M.
Lytle, David S.
Application Number:
JP2019149415A
Publication Date:
June 16, 2021
Filing Date:
August 16, 2019
Export Citation:
Assignee:
GTAT CORPORATION
International Classes:
C30B29/36; C30B23/06
Domestic Patent References:
| JP2012521948A | ||||
| JP8325099A | ||||
| JP2009280463A | ||||
| JP2011251884A | ||||
| JP2011195360A | ||||
| JP4065400A | ||||
| JP2013103848A |
Attorney, Agent or Firm:
Takuro Saeki
Nakamura Tadashi Exhibition
Naoko Ushiyama
Yuko Saeki
Nakamura Tadashi Exhibition
Naoko Ushiyama
Yuko Saeki