Title:
MEASURING SYSTEM FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS58130542
Kind Code:
A
Abstract:
PURPOSE:To know the surface potential immediately under an insulation gate by a method wherein a detection amplifier is connected to the electrode insulated from a substrate, thus the surface of the substrate is put into an accumulation state, and the detection output is kept equal to the reference signal voltage, next the potential change generated by the increase of charges stored in a potential well is detected by an energy irradiation. CONSTITUTION:An element Q1 is closed by giving a voltage phiR to a terminal 43, thus the residual charge in the variable capacitor Cf of a charge amplifier CA is removed, and simultaneously an element Q2 is closed by applying phi1 to a terminal 42. The reference voltage VRef is superposed on a voltage VA slightly larger than the voltage VG of the power source 13 and given from a contact C to the substrate 1 resulting in the generation of an electrode 34 on an insulation electrode 34, then an element Q3 is closed by impressing 41 the voltage compensated to the phi1, and the Cf is adjusted resulting in detection and amplification 14, accordingly VOut1= VRef is measured. Successively, the voltage VG is applied from a contact b, thus the surface of the substrate 1 is inversed 1, and accordingly a well 19 is formed according to the voltage VG. When a light 30 is irradiated, a charge 17 is accumulated on the well, thus the fluctuation DELTAphiS of the surface potential is generated resulting in the detection and amplification 14, and accordingly VOut is measured. In this manner, the surface potntial only immediately under the purposed electrode is image-drawn as the function for the VG and can be accurately obtained without the parasitic effect of a vicinity or superposed electrode.
Inventors:
MIYAMOTO YOSHIHIRO
Application Number:
JP1313282A
Publication Date:
August 04, 1983
Filing Date:
January 28, 1982
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
G01R31/26; H01L21/339; H01L21/66; H01L29/762; (IPC1-7): G01R31/26
Attorney, Agent or Firm:
Sadaichi Igita