Title:
ハフニウム含有高誘電率誘電材料の原子層堆積方法
Document Type and Number:
Japanese Patent JP5063344
Kind Code:
B2
Abstract:
Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.
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Inventors:
Kale, schleias
Nawankar, Pravin
Sharangapani, La Fool
Nawankar, Pravin
Sharangapani, La Fool
Application Number:
JP2007513353A
Publication Date:
October 31, 2012
Filing Date:
May 12, 2005
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/316; C23C16/00; C23C16/02; C23C16/30; C23C16/40; C23C16/44; C23C16/448; C23C16/455; C23C16/56; F22B1/00
Domestic Patent References:
| JP11204517A | ||||
| JP2004071757A | ||||
| JP2003347297A | ||||
| JP2004511909A |
Attorney, Agent or Firm:
Sonoda Yoshitaka
Kobayashi Yoshinori
Kobayashi Yoshinori