Title:
弾道電子発生方法
Document Type and Number:
Japanese Patent JP4776137
Kind Code:
B2
Abstract:
A method of generating ballistic electrons with a high controllability by applying an electric field to a nano-structure micro-crystal layer or a semi-insulating layer of a semiconductor to generate ballistic electrons or quasiballistic electrons by a multiple-tunnel effect; and a semiconductor device used in this method and provided with a practical material constitution.
Inventors:
Nobuyoshi Koshida
Application Number:
JP2001569842A
Publication Date:
September 21, 2011
Filing Date:
March 26, 2001
Export Citation:
Assignee:
Japan Science and Technology Agency
International Classes:
H01J1/312; H01J1/308; H01J9/02; H01J31/12; H01J63/06; H01L29/66
Domestic Patent References:
| JPH08250766A | 1996-09-27 | |||
| JP2000100316A | 2000-04-07 | |||
| JP2000057935A | 2000-02-25 |
Foreign References:
| WO1999065050A1 | 1999-12-16 |
Attorney, Agent or Firm:
Toshio Nishizawa