PURPOSE: To provide an aligning method in which the throughput can be enhanced by shortening the useless time in the positional adjustment between a mask and a sample.

CONSTITUTION: A mask M is irradiated with a charged particle beam while being shifted continuously, along with an opposing sample W, along the opposing surface in the opposite directions Fw and Fm to form an original pattern PS in the irradiated region. An exposure pattern PT corresponding to the original pattern PS is then transferred to a predetermined position of the sample W and the transfer of the exposure pattern PT is repeated to form a plurality of chips C on the sample W. In such aligning method, a plurality of original patterns PS corresponding to the exposure patterns PT of the plurality of chips C on the sample W are formed side by side in the continuously moving direction Fm of the mask M. Exposure patterns PT corresponding to the plurality of original patterns PS can be transferred continuously to the sample W by single continuous movement of the mask M and the sample W.