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Title:
CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD
Document Type and Number:
Japanese Patent JP2012151371
Kind Code:
A
Abstract:

To provide a charged particle beam lithography apparatus equipped with a stage capable of minimizing displacement of a mask from the direction of travel, and to provide a charged particle beam lithography method.

A stage has three pins P1, P2, P3 supporting the rear surface of a mask M, and these three pins P1, P2, P3 are placed symmetrically with respect to a straight line passing through the center of gravity of the mask M and parallel with the direction of travel of the stage. The material composing at least two pins P1, P2 in mirror image relation, out of the three pins P1, P2, P3, has the same rigidity on the design. Preferably, the three pins P1, P2, P3 support the peripheral part of the mask M. Preferably, the stage moves continuously at variable speed according to the density of a pattern drawn on the mask M.


Inventors:
TAMAMUSHI SHUICHI
Application Number:
JP2011010280A
Publication Date:
August 09, 2012
Filing Date:
January 20, 2011
Export Citation:
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Assignee:
NUFLARE TECHNOLOGY INC
International Classes:
H01L21/027; H01J37/20; H01J37/305
Domestic Patent References:
JPH0729814A1995-01-31
JPH10260008A1998-09-29
JP2010219238A2010-09-30
JP2008166763A2008-07-17
JP2007184332A2007-07-19
JPH06163374A1994-06-10
JP2009505398A2009-02-05
Foreign References:
WO2008087725A12008-07-24
Attorney, Agent or Firm:
Atsuko Oaku
Hajime Yamashita