Title:
CRYSTAL DEFECT DETECTING METHOD FOR SILICON WAFER
Document Type and Number:
Japanese Patent JPH07263510
Kind Code:
A
Abstract:
PURPOSE: To prevent the formation of stain film and clearly detect the crystal defect of a silicon wafer.
CONSTITUTION: Etching time (x) is expressed with minute and plotted on X-axis (axis of abscissa) and etching solution composition (y) is expressed with a volumetric mixing ratio between hydrogen fluoride 28.86mol aqueous solution and potassium bichromate 0.15mol aqueous solution and plotted on Y-axis (axis of ordinate). In this case, the etching time and etching solution composition are the values within the range surrounded by straight lines expressed by y=1.9, x=35 and y=-0.02x+2 in this crystal defect detecting method.
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Inventors:
OTANI NAOKO
KUSAKABE KENJI
KONAKAWA YOSHIKO
KIMURA YASUHIRO
KUSAKABE KENJI
KONAKAWA YOSHIKO
KIMURA YASUHIRO
Application Number:
JP5385294A
Publication Date:
October 13, 1995
Filing Date:
March 24, 1994
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/66; (IPC1-7): H01L21/66
Attorney, Agent or Firm:
Soga Doteru (6 people outside)