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Title:
CRYSTALLIZATION EQUIPMENT AND CRYSTALLIZING METHOD
Document Type and Number:
Japanese Patent JP2004319989
Kind Code:
A
Abstract:

To easily form a semiconductor active device in a predetermined region of a semiconductor having a crystalline phase of a big particle size in subsequent processes of a process of obtaining the semiconductor having the crystalline phase of the big particle size from a semiconductor thin film.

Crystallization equipment according to the present invention comprises: a primary irradiation system 3, 4 projecting a light having a substantially uniform light intensity distribution on a predetermined region on a glass substrate on which an irradiated object, that is, a thin film of a-Si is formed; and a secondary irradiation system 7, 8 projecting a light having a light intensity distribution of an inverse peak pattern where a light intensity increases from a region of the least light intensity to surroundings, on the predetermined region.


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Inventors:
TANIGUCHI YUKIO
MATSUMURA MASAKIYO
Application Number:
JP2004090760A
Publication Date:
November 11, 2004
Filing Date:
March 26, 2004
Export Citation:
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Assignee:
ADV LCD TECH DEV CT CO LTD
International Classes:
H01L21/20; H01L21/208; H01L21/268; H01L21/336; H01L29/786; (IPC1-7): H01L21/268; H01L21/20; H01L21/208; H01L21/336; H01L29/786
Domestic Patent References:
JP2000150412A2000-05-30
JPH10156571A1998-06-16
JPH01246829A1989-10-02
JP2002203861A2002-07-19
Foreign References:
WO2002042847A12002-05-30
Attorney, Agent or Firm:
Takao Yamaguchi



 
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