Title:
SEMICONDUCTOR DEVICE HAVING FLOATING GATE
Document Type and Number:
Japanese Patent JP3203709
Kind Code:
B2
Abstract:
PURPOSE: To provide a structure of a gate electrode improved in write and erase characteristics of a nonvolatile semiconductor memory device having floating gates such as an EPROM.
CONSTITUTION: A part of a floating gate 28 is constituted of a polysilicon layer formed by chemical vapor growth under conditions to form many microruggednesses on the surface, and the surface of the floating gate 28 with micro-ruggednesses is overlaid with an intermediate insulating film 30 and a control gate 32 along the ruggedness.
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Inventors:
Toshiyuki Nishihara
Application Number:
JP29376691A
Publication Date:
August 27, 2001
Filing Date:
October 14, 1991
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/8247; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP3272165A | ||||
| JP5641182B2 |
Attorney, Agent or Firm:
Takahisa Sato