Title:
FORMATION OF DEPOSITED FILM
Document Type and Number:
Japanese Patent JP2965094
Kind Code:
B2
Abstract:
PURPOSE: To improve the characteristics of a film to be formed and improve the productivity by forming a thin film layer on a substrate, etching the thin film layer to leave a crystalline nucleus on the surface of the base and growing the crystalline nucleus before forming a deposited film.
CONSTITUTION: Before forming a deposited film, a thin film which contains a silicon atom and a germanium atom is formed on a substrate 3. The substrate 3 is set on the holder 4 of a film forming device, hydrogen plasma processing is performed and a chemical species to be decomposed is introduced into the surface of the thin film which has the silicon atom and the germanium atom. Then, PH3/SiF4 mixed gas is supplied from a gas introducing pipe and the deposition of silicon crystal is performed. The density of the crystalline nucleus obtained is controlled by suitably selecting the composition rate of germanium in the thin film layer, the film structure of the thin film layer and a hydrogen plasma condition of the layer thickness, and excellent crystal silicon or silicon germanium crystal is manufactured on the substrate 3 at a low temperature.
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Inventors:
SAKAI AKIRA
ISHIHARA SHUNICHI
SHIMIZU ISAMU
ISHIHARA SHUNICHI
SHIMIZU ISAMU
Application Number:
JP18415891A
Publication Date:
October 18, 1999
Filing Date:
June 28, 1991
Export Citation:
Assignee:
KYANON KK
International Classes:
H01L21/20; H01L21/205; H01L21/302; H01L21/3065; H01L21/336; H01L29/786; H01L31/18; (IPC1-7): H01L21/205; H01L21/3065
Attorney, Agent or Firm:
Yamashita