PURPOSE: To exclude unnecessary deposition of a polycrystalline layer of the same material as a well layer and a barrier layer, by a method wherein, when a superlattice layer is formed, the well layer and the barrier layer are formed by an organic metal molecular beam epitaxial growth method in the state that a specified temperature is applied to a semiconductor substrate.
CONSTITUTION: A dielectric layer 2 is formed on the main surface la of a semiconductor substrate 1. Next, a dielectric layer 2' is formed. Said layer has a plurality of windows 2a' stretching in a stripe type which make the main surface la of the semiconductor substrate 1 face the outside from the dielectric layer 2, and therefore has a plurality of stripe type dielectric layer parts 2b'. By etching treatment using said layer as a mask, a plurality of trenches 3 are formed at positions facing a plurality of the windows 2a' on the main surface la side of the substrate 1 respectively. Well layers 4a and barrier layers 4b are alternately formed in order on the substrate l. A plurality of superlattice layers 4 are formed wherein the well layers 4a and the barrier layers 4b are alternately laminated in order at positions in a plurality of the trenches 4 facing a plurality of the windows 2a' of the dielectric layer 2' respectively.
YAMADA TAKESHI
IGA RYUZO
