Title:
THIN FILM FORMING DEVICE AND OPERATION METHOD THEREFOR
Document Type and Number:
Japanese Patent JP3232130
Kind Code:
B2
Abstract:
PURPOSE: To provide the thin film forming device which can form carbon and silicon thin films having good-quality structures.
CONSTITUTION: This thin film forming device is provided with a vacuum chamber 1, a material supply section 10 which is disposed in this vacuum chamber and ejects a material in the form of vapor or mist toward a substrate 100, a counter electrode 13 which is disposed to face this material supply section and holds the substrate, a substrate heating means 13', a grid 12 which is disposed between the material supply section and the counter electrode, a filament 11 for generation of thermions disposed between this grid and the material supply section, a hydrogen atom supply section 15 which releases the atomic hydrogen, etc., contributing to the decomposition reaction of the material near the substrate, a cylindrical insulator 50 which is disposed to enclose the counter electrode, the grid and the filament and is variable in diameter, a potential mean 32 which maintains the grid at a positive potential with respect to the filament, a power source means which attains the prescribed potential distribution within the vacuum chamber and a conducting means which electrically connect the inside of the vacuum chamber to this power source means. The electron energy distribution of the plasma in the cylinder is adjusted by varying the diameter of the cylinder 50, by which the selective decomposition reaction of the material is enabled.
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Inventors:
Makoto Tanaka
Makoto Tanabe
Wasaburo Ohta
Makoto Tanabe
Wasaburo Ohta
Application Number:
JP18535392A
Publication Date:
November 26, 2001
Filing Date:
July 13, 1992
Export Citation:
Assignee:
株式会社リコー
International Classes:
C23C16/50; C04B28/24; (IPC1-7): C23C16/50
Domestic Patent References:
| JP61283112A | ||||
| JP5106033A |
Attorney, Agent or Firm:
Toru Kabayama (1 person outside)