PURPOSE: To grow thin ribbon crystal of constant shape at high speed, by installing a die made of carbon having many capillary slits for feeding Si molten liq. at the upper end surface made by cutting the die obliquely at an acute angle to pulling up direction for the ribbon crystal.

CONSTITUTION: Many capillary slits 5 are made in parallel with the thickness direction on the upper end surface of a die 2 made of carbon, the surface which is made by cutting the die obliquely at an acute angle to the pulling up direction. Si molten liq. 4, in the same way with the conventional FEG process, rises to the upper end surface of the die 2 by the capillarity of the slits 5, and wets whole surface made by cutting the die obliquely. Pulling up of ribbon crystal 1 from the molten liq. 4 yields a crystal of constant thickness depending on the shape of the die 2, in addn., at high rate because of large area of solid-liq. interface.