To provide a recrystallized silicon carbide large in volume resistivity and to provide the method for producing the high-resistance recrystallized silicon carbide.

This recrystallized silicon carbide has open pores, a carbon layer on the inner wall surface of each open pore is removed by etching and the resistivity at room temp. is ≥10000 Ω.cm. The inner wall surface of the open pore is etched by applying heat treatment in a state that a base composed of the recrystallized silicon carbide having the open pores is dipped into an acid solution. The acid solution preferably contains at least hydrofluoric acid, more preferably hydrofluoric acid and nitric acid, and the temp. of the heat treatment is ≥100°C.