Title:
トランジスタの作製方法
Document Type and Number:
Japanese Patent JP6984578
Kind Code:
B2
Abstract:
A first regrowth layer and a second regrowth layer comprising GaAs having high resistance are regrown on a surface of an etching stop layer exposed to the bottom of a first groove and a second groove, and then n-type InGaAs is regrown on the first regrowth layer and the second regrowth layer, whereby a source region and a drain region configured to make contact with a channel layer are formed in the first groove and the second groove respectively.
Inventors:
Takuya Hoshi
Yoshiya Yuki
Hiroki Sugiyama
Hideaki Matsuzaki
Yoshiya Yuki
Hiroki Sugiyama
Hideaki Matsuzaki
Application Number:
JP2018223140A
Publication Date:
December 22, 2021
Filing Date:
November 29, 2018
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01L21/338; H01L21/20; H01L21/28; H01L29/417; H01L29/778; H01L29/812
Domestic Patent References:
| JP2006261179A | ||||
| JP2017152467A | ||||
| JP2011159795A | ||||
| JP5175245A |
Attorney, Agent or Firm:
Shigeki Yamakawa
Yuzo Koike
Masaki Yamakawa
Yuzo Koike
Masaki Yamakawa