To provide a lamination type electron source that can easily form a large area and its manufacturing method.
In the lamination type electron source 10, an insulation layer 14 is formed on the top of the lower electrode 12 and an upper electrode 16 is formed on top of the insulation layer 14. The upper electrode 16 is formed in lattice shape and the opening part 20 of the lattice is formed so as to expose the insulation layer 14. The cross section of the opening part 20 is formed with the side length D2 larger than the side length D1 and the wall 20c that forms the opening part 20 is formed in slanted face. The thickness T1 of the upper electrode 16 is formed at more than 50 nm deep. Electrons are efficiently emitted from the position of the thickness T2 of the wall 20c of the opening part 20 of the upper electrode 16.
SEKI MASAHIKO
ATOZAWA MIZUYOSHI
UEDA TOMOSHI
TAKEI TATSUYA
HAGIWARA HIROSHI