Title:
ＭＥＭＳ素子
Document Type and Number:
Japanese Patent JP7125004
Kind Code:
B2
Abstract:
To provide a MEMS element having high sensitivity.SOLUTION: This MEMS element has a slit 5 which is formed in a part of a vibration film 3 fixed to a handle substrate 1, and comprises a vibration area having a free end. The vibration area has the free end, and therefore, greatly vibrates compared to vibration of the vibration film 3 fixed to the handle substrate 1. Transistors D, G, S are provided in the vibration areas, whereby detection result can be obtained from fluctuation in an output signal due to Piezo effect in association with vibration of the film which constitutes the transistors D, G, S.SELECTED DRAWING: Figure 1
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Inventors:
Araki Shinichi
Application Number:
JP2018095877A
Publication Date:
August 24, 2022
Filing Date:
May 18, 2018
Export Citation:
Assignee:
New Japan Radio Microdevices Co., Ltd.
International Classes:
B81B3/00; H04R23/02; H04R31/00
Domestic Patent References:
| JP2011183539A | ||||
| JP2017121028A | ||||
| JP48031891Y1 | ||||
| JP2122573A | ||||
| JP2006167814A | ||||
| JP2017525956A | ||||
| JP2011004129A | ||||
| JP10242480A |
Foreign References:
| US20110048138 | ||||
| KR1020160002489A |
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