Title:
METHOD FOR MANUFACTURING FeGa ALLOY SINGLE CRYSTAL, AND LID
Document Type and Number:
Japanese Patent JP2021138592
Kind Code:
A
Abstract:
To provide a method for manufacturing a FeGa alloy single crystal, capable of controlling the concentration difference of the content of gallium in the same single crystal to an atomic weight% of 1% or less, and a lid put on a crucible.SOLUTION: A method for manufacturing a FeGa alloy single crystal using a one directional solidification crystal growth method includes a bubble removal step of depressurizing the melt of a mixture of Fe and Ga in a crucible having a put lid 30 to remove air bubbles in the melt. The lid 30 includes an aeration hole 31 for aerating the inside and outside of the crucible having the put lid; the horizontal cross sectional area of the aeration hole 31 is 1.5-5.0 mm2; the lid 30 is counterbore-shaped. The lid 30 put on the crucible used for the method for manufacturing the FeGa alloy single crystal using the one directional solidification crystal growth method includes the aeration hole 31 for aerating the inside and outside of the crucible having the put lid 30.SELECTED DRAWING: Figure 4
Inventors:
IZUMI KIYOSHI
SATO MASAAKI
HOSHIKAWA KEIGO
TAISHI TOSHINORI
SATO MASAAKI
HOSHIKAWA KEIGO
TAISHI TOSHINORI
Application Number:
JP2020039900A
Publication Date:
September 16, 2021
Filing Date:
March 09, 2020
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
UNIV SHINSHU
UNIV SHINSHU
International Classes:
C30B29/52; B22D27/04; B22D27/15; C30B11/00; C30B11/02; F27B14/04; F27B14/12
Attorney, Agent or Firm:
Fumio Takino
Toshiaki Tsuda
Yasuhiro Fukuda
Atsushi Watanabe
Toshiaki Tsuda
Yasuhiro Fukuda
Atsushi Watanabe