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Title:
MANUFACTURE OF MAGNETIC GARNET SINGLE-CRYSTAL THICK FILM FOR MAGNETOSTATIC-WAVE ELEMENT
Document Type and Number:
Japanese Patent JPH10116750
Kind Code:
A
Abstract:

To provide the method of manufacturing a magnetic garnet single- crystal thick film for a magnetostatic-wave(MSW) element, capable of manufacturing, with good reproducibility, the magnetic garnet single-crystal thick film which is suitable for the MSW element, whose film thickness is 30μm or higher, whose ferromagnetic resonance half width ΔH is narrow and which has a mirror surface.

In the manufacturing method of a magnetic garnet single-crystal thick film for a magnetostatic-wave element, the magnetic garnet single-crystal thick film used for the magnetostatic-wave element is grown on a nonmagnetic garnet single-crystal substrate by a liquid epitaxial growth method. A solution in which the molar ratio (PbO/B2O3) of a PbO concentration to a B2O3 concentration in a solution is within a range of 14.0 or lower and 8.0 or higher is used, and the thick film which has a mirror surface, whose ferromagnetic resonance half width ΔH is 0.8Oe or lower and whose film thickness is 30μm or higher is grown.


Inventors:
SEKIJIMA YUUTOKU
FUJII TAKASHI
TAKAGI HIROSHI
Application Number:
JP28755596A
Publication Date:
May 06, 1998
Filing Date:
October 09, 1996
Export Citation:
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Assignee:
MURATA MANUFACTURING CO
International Classes:
H01F10/24; H01F41/28; H01P1/215; H01P1/23; H01P3/00; (IPC1-7): H01F41/28; H01F10/24; H01P1/215; H01P1/23; H01P3/00
Attorney, Agent or Firm:
Okada