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Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS OF THE DEVICE
Document Type and Number:
Japanese Patent JP3540180
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To subject an object wet treatment of a strong oxidative power and remove, in a short time, the peeled pieces of an organic thin film, such as a resist, and a contaminated organic matter and the like, which are adhering to the surface of a wafer by a method, wherein light of a wavelength shorter than a specified value is irradiated on the surface of the substrate exposed to a gas or a liquid containing hydrogen peroxide.
SOLUTION: A silicon wafer, removed of an organic matter and a metal film on its surface, is left in a clean room for a week. Thereafter, the wafer is put on a sample board 103 in a treatment vessel 101. Then heated water hydrogen peroxide is bubbled with argon gas, and while the gas hydrogen peroxide is introduced in the container 101 through a gas inlet port 105, the wafer is irradiated with a light (wavelength of 253.7 nm) of a mercury lamp for one minute. While the wafer is exposed to gas hydrogen peroxide, the wafer is irradiated with ultraviolet rays, but even though hydrogen peroxide is a liquid state, it absorbs light of wavelength of about 300 nm or shorter and is decomposed by the light, when the light is irradiated on the wafer. Therefore, even if UV light is irradiated on the wafer in a state in which the wafer is immersed in a solution containing hydrogen peroxide, a contaminated organic matter and the like on the surface of the wafer can be removed.


Inventors:
Hirotake Nishino
Application Number:
JP36728898A
Publication Date:
July 07, 2004
Filing Date:
December 24, 1998
Export Citation:
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Assignee:
Toshiba Corporation
International Classes:
H01L21/306; H01L21/027; H01L21/304; (IPC1-7): H01L21/304; H01L21/027
Domestic Patent References:
JP58108746A
JP9082679A
JP7283191A
JP7153728A
JP6077199A
JP4302145A
JP3072626A
Attorney, Agent or Firm:
Hideaki Togawa