Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5472955
Kind Code:
A
Abstract:
PURPOSE:To stabilize the forward voltage of a Schottky barrier diode, by forming an aluminum electrode surface which contains silicon on a n-type silicon semiconductor surface. CONSTITUTION:On the n-tpe silicon semiconductor region surface of smiconductor substrate 1, aluminum electrodes 21 and 22 are formed, which contain silicon, so as to form a Schottky barrier diode; and then, substrate 1 is heated to a high temperature and cooled gradually to control the forward voltage of the Schottky barrier diode, thereby removing its dispersion.
Inventors:
SATOU MASAYUKI
NAKADA KENSUKE
NAKADA KENSUKE
Application Number:
JP13998577A
Publication Date:
June 11, 1979
Filing Date:
November 24, 1977
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/872; H01L21/283; H01L21/324; H01L29/47; (IPC1-7): H01L21/283; H01L21/324; H01L29/48
Previous Patent: SEMICONDUCTOR THIN FILM AND METHOD OF FABRICATING SAME
Next Patent: COMPOSITE ELECTRONIC PARTS AND ITS MANUFACTURE
Next Patent: COMPOSITE ELECTRONIC PARTS AND ITS MANUFACTURE