Title:
METHOD AND APPARATUS FOR MANUFACTURING GROUP III NITRIDE CRYSTAL
Document Type and Number:
Japanese Patent JP2017200862
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a group III nitride crystal, capable of achieving improved production efficiency.SOLUTION: A method for manufacturing a group III nitride crystal comprises the steps of:: activating a reactive gas (H) in a reactive gas supply pipe 103 by a coil 104; reacting the activated reactive gas (H) with a group III element-containing source (GaO) 106 to form a group III oxide gas (GaO) being the oxide gas of the group III element containing source; and reacting the group III oxide gas (GaO) with a nitrogen element-containing gas (ammonia) supplied from a nitrogen element-containing gas supply port 113 to form a group III nitride crystal on a seed substrate 116. The apparatus for manufacturing the group III nitride crystal uses the method.SELECTED DRAWING: Figure 1
Inventors:
MORI YUSUKE
IMAIDE KAN
TAKINO JUNICHI
KAI TAKAYUKI
OKAYAMA YOSHIHISA
IMAIDE KAN
TAKINO JUNICHI
KAI TAKAYUKI
OKAYAMA YOSHIHISA
Application Number:
JP2016092687A
Publication Date:
November 09, 2017
Filing Date:
May 02, 2016
Export Citation:
Assignee:
PANASONIC CORP
International Classes:
C30B29/38; C23C16/34; C23C16/448; C30B25/14; H01L21/205
Attorney, Agent or Firm:
Mitsuo Tanaka
Samejima Mutsumi
Hiroshi Okabe
Kazuhisa Inaba
Samejima Mutsumi
Hiroshi Okabe
Kazuhisa Inaba
Previous Patent: A precise constituent for siliceous membrane formation
Next Patent: A manufacturing method of an optical panel for image formation
Next Patent: A manufacturing method of an optical panel for image formation