Title:
METHOD OF EVALUATING SEMICONDUCTOR WAFER AND EVALUATION DEVICE
Document Type and Number:
Japanese Patent JP3666527
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To exactly and with good reproducibility measure a starting point of slip dislocation introduction at zero deformation speed in a process for the temperature and atmosphere that a slip dislocation is considered to be introduced.
SOLUTION: A creep test is conducted, applying flexure loading to a semiconductor wafer. A test atmosphere is, for example, nitrogen gas, and the gas temperature is kept at constant temperatures within the range of 600°C to 1300°C, and the gas pressure (gauge pressure) is kept at constant pressure within the range of 0 to 1 atmospheric pressure. A starting point of slip dislocation introduction of semiconductor wafer is obtained from the relation between the distortion and loading time of semiconductor wafer, with flexure loading (flexure stress as the parameter).
Inventors:
Masaru Shinomiya
Eiichi Inui
Eiichi Inui
Application Number:
JP25394396A
Publication Date:
June 29, 2005
Filing Date:
September 03, 1996
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
G01N3/00; H01L21/66; (IPC1-7): H01L21/66; G01N3/00
Domestic Patent References:
| JP1061641U | ||||
| JP3252151A | ||||
| JP6124990A | ||||
| JP9229838A | ||||
| JP9237813A | ||||
| JP63146437A | ||||
| JP63311143A |
Attorney, Agent or Firm:
Chieko Tateno
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