Title:
METHOD FOR HOMOGENIZING CHARACTERISTICS OF GAAS SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH03285899
Kind Code:
A
Abstract:
PURPOSE:To efficiently homogenize the characteristics of single crystal in the easy and safe operation by covering GaAs single crystal with oxide powder and heating it at a specified temp. or lower and forming an oxide film on the surface of single crystal and thereafter heat-treating this single crystal at a specified temp. or higher. CONSTITUTION:In the case of heating and cooling GaAs single crystal to homogenize its characteristics, GaAs single crystalline ingot 2 is covered with oxide powder 3 (gallium oxide, etc., about 0.5-50mum mean particle diameter) described below and introduced into a Petri dish 1 made of quartz. The oxide powder 3 is allowed to react with GaAs single crystal in a heating stage and an oxide film is formed on the surface of crystal. Then this Petri dish 1 is introduced into a quartz reaction pipe 4 and heat treatment is performed at a reduced pressure of about 1-10Pa at 600-950 deg.C for about 4-20 hours. After the oxide film is formed on the surface of single crystalline ingot 2, it is heat-treated at >=950 deg.C and cooled to room temp. Thereby homogenization of the characteristics of GaAs single crystal is performed easily and safely at a high temp. of >=950 deg.C.
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Inventors:
YOSHIDA MASATO
SHIMIZU ICHIJI
ISHIBASHI HIROYUKI
SHIMIZU ICHIJI
ISHIBASHI HIROYUKI
Application Number:
JP8592690A
Publication Date:
December 17, 1991
Filing Date:
March 30, 1990
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD
International Classes:
C30B29/42; C30B33/02; (IPC1-7): C30B29/42; C30B33/02
Attorney, Agent or Firm:
Hirose Akira
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