Title:
METHOD OF MANUFACTURING CHARGE COUPLED DEVICE
Document Type and Number:
Japanese Patent JPS5533099
Kind Code:
A
Abstract:
A charge coupled device (CCD-device) for sensors and memory is produced so as to have a bipolar structure, with the doped regions and zones thereof being produced by ion implantation whereby a greater structure density is attained along with a reduction in the transfer coefficient epsilon .
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Inventors:
OTSUTOMAARU IENCHIYU
IENE CHIHANI
IENE CHIHANI
Application Number:
JP10900679A
Publication Date:
March 08, 1980
Filing Date:
August 27, 1979
Export Citation:
Assignee:
SIEMENS AG
International Classes:
H01L21/266; H01L21/339; H01L29/762; H01L29/10; H01L29/765; (IPC1-7): H01L29/76
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