METHOD OF TRANSFERRING THIN FILM DEVICE AND METHOD OF MANUFACTURING DEVICE

Japanese Patent JP2004140380

A

To provide a method of transferring thin film device by which an object to be peeled can be peeled easily regardless of the characteristics, conditions, etc., of the object and, particularly, the object can be transferred to various types of transfer bodies.

The method of transferring thin film device, in which a layer to be transferred formed on a substrate through a separation layer and containing a thin film device is peeled off from the substrate and transferred to a transfer body, includes a step of disposing the transfer body on one side of the layer to be transferred opposite to the substrate and a step of transferring the layer to the transfer body by peeling off the layer from the substrate at the inside and/or interface of the separation layer. The front and rear surfaces of the layer are made equal to those when the layer is formed on the substrate by performing the transfer a plurality of times.

JP2614745	[Title of the Invention] A method for manufacturing a semiconductor device
JP2569099	[Title of Invention] epitaxial growth method
JPH0435517	SURFACE ACOUSTIC WAVE CONVOLVER

SHIMODA TATSUYA
INOUE SATOSHI
MIYAZAWA WAKAO

JP2003382626A

May 13, 2004

November 12, 2003

Click for automatic bibliography generation  

SEIKO EPSON CORP

H01L21/20; H01L21/02; H01L21/336; H01L27/12; H01L29/786; (IPC1-7): H01L27/12; H01L21/20; H01L21/336; H01L29/786

JPH06504139A

1994-05-12

Masahiko Ueyanagi
Fujitsuna Hideyoshi
Osamu Suzawa

Previous Patent: SEMICONDUCTOR WAFER TREATING DEVICE EQUIPPED WITH DUST-PROOFING FUNCTION

Next Patent: METHOD OF CONNECTING PRINTED WIRING BOARD