To provide a non-volatile semiconductor memory device which can shorten the write time and the verify time and can deal with octal level, and the data write method thereof.

After voltage of all bit lines is charged up to the power source voltage Vcc through PMOS transistor PT21 prior to write, bit lines are connected to supply sources of voltage in accordance with latch data of latch circuits Q23, Q22, Q21, and also write is performed in parallel. Thereby, the write time can be shortened, and verifying read and normal read can be performed at high speed.