Title:
酸化物単結晶の育成装置及び育成方法
Document Type and Number:
Japanese Patent JP6834493
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus for growing an oxide single crystal, capable of corresponding to low cost, and a large diameter and long size of the oxide single crystal.SOLUTION: An apparatus 100 for growing an oxide single crystal comprises: a heat insulator 7 surrounding a heating space SP; a crucible 1 arranged in the heating space SP; a resistance heating type heater 4 arranged in the heating space SP; and an intermediate annular plate member 7C arranged in the heating space SP. The heating space SP is thermally separated into an upper heating space SP1 and a lower heating space SP2 by the crucible 1 and the intermediate annular plate member 7C, and the resistance heating type heater 4 includes an upper stage heater 4U arranged in the upper heating space SP1, and a middle heater 4M and lower stage heater 4L arranged in the lower heating space SP2 .SELECTED DRAWING: Figure 1
Inventors:
Akira Terashima
Application Number:
JP2017002645A
Publication Date:
February 24, 2021
Filing Date:
January 11, 2017
Export Citation:
Assignee:
Sumitomo Metal Mining Co., Ltd.
International Classes:
C30B15/14; C30B29/20; C30B29/28; C30B29/30; F27B14/06; F27B14/08
Domestic Patent References:
| JP2014125404A | ||||
| JP2013209257A | ||||
| JP2013155082A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito