Title:
PATTERN FORMATION
Document Type and Number:
Japanese Patent JPS63299336
Kind Code:
A
Abstract:
PURPOSE: To form a resist pattern with a high aspect ratio and high resolution, by coating a substrate with photosensitive resin, prebaking it, irradiating it with far-ultraviolet rays, performing a desired pattern exposure, and developing it.
CONSTITUTION: After a positive photosensitive resin 2 is spread on a semiconductor substrate 1, and subjected to hot plate baking, a resist firm 2 is obtained. The whole part of the resist film 2 is irradiated with far-ultraviolet rays 3. A desired pattern is exposed, via a mask 4, by a reduction projection aligner. A resist pattern 2A is formed, by paddle developing of 60 sec. applying alkali developer. Thereby, the pattern 2A is formed with a high aspect ratio and high resolution.
Inventors:
ENDO MASATAKA
SASAKO MASARU
OGAWA KAZUFUMI
SASAKO MASARU
OGAWA KAZUFUMI
Application Number:
JP13502387A
Publication Date:
December 06, 1988
Filing Date:
May 29, 1987
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
G03F7/26; G03C5/00; G03F7/00; H01L21/027; H01L21/30; (IPC1-7): G03C5/00; G03F7/00; H01L21/30
Attorney, Agent or Firm:
Toshio Nakao