Title:
PHOTORESIST CROSS-LINKING AGENT, PHOTORESIST COMPOSITION, PHOTORESIST PATTERN FORMING METHOD, AND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3732695
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide the photoresist cross-linking agent superior in the cross- linking ability by low exposure energy by incorporating a specified compound.
SOLUTION: The compound to be incorporated is represented by the formula in which each of R1, R2, and R is selected from a group comprising a 1-10C main chain or side chain substituted alkyl, a 1-10C side chain or main chain substituted ester, a 1-10C main chain or side chain substituted keton, a 1-10C side chain or main chain substituted carboxylic acid, a 1-10C side chain or main chain substituted acetal, a 1-10C side chain or main chain substituted alkyl having a ≥1 hydroxyl group, a 1-10C side chain or main chain substituted ester having a ≥1 hydroxyl group, a 1-10C side chain or main chain substituted carboxylic acid having a ≥1 hydroxyl group, a 1-10C side chain or main chain substituted acetal and the like having a ≥1 hydroxyl group; R3 is an H atom or the like; (m) is 0 or 1; and (n) is 1, 2, 3, 4, or 5.
Inventors:
Chung Zhao Chang
Root root Kei
Kim Ming-soo
Kin Toki
Kim Hidehide
White base ho
Root root Kei
Kim Ming-soo
Kin Toki
Kim Hidehide
White base ho
Application Number:
JP33866099A
Publication Date:
January 05, 2006
Filing Date:
November 29, 1999
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
G03F7/038; C07D317/12; C07D319/06; C07D407/12; C08F20/28; C08F24/00; C08F220/06; C08F222/06; C08F232/00; G03F7/004; (IPC1-7): G03F7/038; C08F20/28; C08F24/00; C08F220/06; C08F222/06; C08F232/00; G03F7/004
Domestic Patent References:
JP2051509A | ||||
JP8208812A | ||||
JP9235326A | ||||
JP10130340A | ||||
JP11002903A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune
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