Title:
フォトレジスト架橋剤、フォトレジスト共重合体とその製造方法、フォトレジスト組成物及びフォトレジストパターン形成方法
Document Type and Number:
Japanese Patent JP4222700
Kind Code:
B2
Abstract:
The present invention discloses a cross-linking monomer for a photoresist polymer represented by following Chemical Formula 1:wherein, V represents CH2, CH2CH2, oxygen or sulfur; Y is selected from the group consisting of straight or branched C1-10 alkyl, oxygen, and straight or branched C1-10 ether; R' and R'' individually represent H or CH3; i is a number of 1 to 5; and n is a number of 0 to 3; and a process for preparing a photoresist copolymer comprising the same.
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Inventors:
Lee Nemori
High dimension
Chung Zhao Chang
Chung Min Ho
White base ho
High dimension
Chung Zhao Chang
Chung Min Ho
White base ho
Application Number:
JP37115799A
Publication Date:
February 12, 2009
Filing Date:
December 27, 1999
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
G03F7/004; G03F7/027; C07C69/753; C07D519/00; C08F220/16; C08F222/06; C08F232/04; G03F7/039; C08F290/02
Domestic Patent References:
| JP2869166B2 | ||||
| JP2000038391A | ||||
| JP11286469A | ||||
| JP11349637A | ||||
| JP2000086726A | ||||
| JP10218947A | ||||
| JP11327147A | ||||
| JP11258802A | ||||
| JP2000122290A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune
Previous Patent: JPS4222699
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