PLASMA PROCESSING APPARATUS

Japanese Patent JP3792999

B2

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus for preventing losses in high-frequency power and realizing high-density uniform plasma processing. SOLUTION: The plasma processing apparatus includes a processing container which is grounded, a holding electrode for holding a wafer in the processing chamber, an opposite electrode located opposite to the holding electrode, and a high-frequency applying means for applying a high frequency to the holding electrode or the opposite electrode and generating plasma between the holding electrode and the opposite electrode. The dimensions in the system are determined so that a parasitic capacitance C (pF) between the grounding part of the processing container and the conductive part, for which the high frequency is transmitted, is 1210×f-0.9 or lower, where f (MHz) is the high frequency applied. The processing apparatus has a DC power supply for holding the wafer electrostatically on the holding electrode, and there is a high-frequency trap with a length of (2n+1)/4 of the wavelength of applied high frequency between the holding electrode and the DC power supply.