POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING PATTERN BY USING THE SAME

Japanese Patent JP2005084239

A

To provide a positive resist composition which suppresses development defects and to provide a method for forming a pattern by using the composition.

The positive resist composition contains: (A) a fluorine-containing resin which has such a structure that a fluorine atom is introduced by substitution in the main chain and/or the side chain of the polymer skeleton and which has a group decomposed by the effect of an acid to increase the solubility with an alkaline developing solution; (B) a compound which generates an acid by irradiation with active rays or radiation; and (C) a compound having at least one fluorine atom. The method for forming a pattern is carried out by using the composition.

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JP2023110575	POLYMER, RESIST COMPOSITION, AND PATTERN FORMING METHOD

FUJIMORI TORU

JP2003314218A

March 31, 2005

September 05, 2003

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FUJI PHOTO FILM CO LTD

G03F7/039; C08F212/14; C08F214/18; C08F216/14; C08F220/28; C08F232/08; G03F7/004; H01L21/027; (IPC1-7): G03F7/039; C08F212/14; C08F214/18; C08F216/14; C08F220/28; C08F232/08; G03F7/004; H01L21/027

Shohei Oguri
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Hamada

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