Title:
POSITIVE TYPE IONIZATION RADIATION RESIST COMPOSITION
Document Type and Number:
Japanese Patent JPS6093430
Kind Code:
A
Abstract:
PURPOSE: To enhance dry etching resistance by incorporting a specified polymer obtained by modifying at least a small part of hydroxy groups of p-hydroxy-α- methyl-styrene polymer to aromatic sulfonic acid ester groups.
CONSTITUTION: A resist compsn. contains a polymer obtained by modifying at least a small part of hydroxy groups of p-hydroxy-α-methylstyrene polymer to aromatic sulfonic acid ester groups represented by formula I in which R is an org. groups of formula II, and m/(m+n) is, preferably, in the range of 0.5W1.0. As a result, a resist compsn. good in dry etching resistance can be obtained without impairing resolution, transmittance, and contrast.
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Inventors:
MIYAGAWA MASASHI
YONEDA YASUHIRO
NISHII KOUTA
FUKUYAMA SHIYUNICHI
YONEDA YASUHIRO
NISHII KOUTA
FUKUYAMA SHIYUNICHI
Application Number:
JP20004683A
Publication Date:
May 25, 1985
Filing Date:
October 27, 1983
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
G03F7/20; C08F8/00; C08F8/34; C08F12/24; G03C1/72; G03C5/08; G03F7/004; G03F7/039; H01L21/027; (IPC1-7): C08F8/34; C08F12/24; G03C5/08; G03F7/10; H01L21/30
Attorney, Agent or Firm:
Aoki Akira
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