Title:
PRODUCTION FOR DIAMOND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH05201794
Kind Code:
A
Abstract:
PURPOSE:To provide a producing method for a diamond semiconductor able to grow the single crystalline diamond semiconductor with a substrate inexpensive and easy to obtain. CONSTITUTION:In the producing method for the diamond semiconductor by the vapor phase synthesis, after the 1st growth by growing a polycrystalline diamond on the substrate by the vapor phase synthesis, the diamond single crystal grains 12 are separated from the polycrystalline diamond and the 2nd growth by growing the diamond on the growing surface of the diamond single crystal grains in the 1st growth by the vapor phase synthesis while doping impurities totally or partially is executed.
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Inventors:
OKURA KOICHI
NOZU EIJI
YOSHINO SHOICHI
NOZU EIJI
YOSHINO SHOICHI
Application Number:
JP1155792A
Publication Date:
August 10, 1993
Filing Date:
January 27, 1992
Export Citation:
Assignee:
KUBOTA KK
International Classes:
C30B29/04; (IPC1-7): C30B29/04
Attorney, Agent or Firm:
Kitamura Osamu
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