Title:
PRODUCTION OF NONLINEAR OPTICAL MATERIAL
Document Type and Number:
Japanese Patent JP2945258
Kind Code:
B2
Abstract:
PURPOSE: To decrease a grain size distribution in the micranization by heat treatment by specifying a temp. of a substrate at the time of forming an amor phous thin film on the substrate.
CONSTITUTION: A sputtering device 7 is composed of a target 1 made of a metal, the target 2 made of an amorphous material, a substrate 3, a substrate holder 4 and high-frequency power sources 5 and 6 supplying high frequency power to each targets 1 and 2. The sputtering is executed by supplying the high-frequency power to form the amorphous thin film in which a metal is dispersed. Au is used as the metal used to the target 1, Al2O3 is used as the amorphous material used for the target 2 and a quartz glass is used as the substrate 3. In this case, the temp. of the substrate at the time of forming the amorphous thin film on the substrate is set at room temp. to 200°C. In this way, a nonlinear optical material excellent in nonlinear optical characteristic is produced easily. That is, a metal or a semiconductor is dispersed uniformly in the thin film without being atomized.
Inventors:
MANABE YOSHIO
MITSUYU TSUNEO
MITSUYU TSUNEO
Application Number:
JP31960393A
Publication Date:
September 06, 1999
Filing Date:
December 20, 1993
Export Citation:
Assignee:
MATSUSHITA DENKI SANGYO KK
International Classes:
G02F1/35; C03C17/23; C23C14/08; C23C14/50; C23C16/50; G02F1/355; (IPC1-7): G02F1/35
Attorney, Agent or Firm:
Hiroyuki Ikeuchi
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