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Title:
SEMICONDUCTOR CRYSTAL GROWTH METHOD
Document Type and Number:
Japanese Patent JPS52150964
Kind Code:
A
Abstract:
PURPOSE:To grow epitaxial layers of varying impurities continuously in multilayers by bisecting the gas flow in a reaction tube to a flow of a higher impurity concentration and a flow of a lower impurity concentration and properly opposing wafers to these gas flows.

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Inventors:
MIURA AKIRA
OGASAWARA KAZUTO
Application Number:
JP6830076A
Publication Date:
December 15, 1977
Filing Date:
June 10, 1976
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
H01L21/205; (IPC1-7): B01J17/22; H01L21/205



 
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