To provide a semiconductor device in which reduction of the size and manufacturing can be facilitated, and its manufacturing method.
In a yaw rate sensor 1, a sensing part 3 is provided on a silicon substrate 2 and a bonding wall 15 for sealing is formed to surround the sensing part 3. A hole 16 is made in the bonding wall 15 for sealing. Electrode pads 7, 10 and 13 are provided on the outside of the bonding wall 15 for sealing such that an electric signal from the sensing part 3 can be taken out through the electrode pad 7, 10 or 13. A cover member 17 is bonded to the upper surface of the bonding wall 15 for sealing through a low melting point glass 19. An evaporation layer 20 is formed above the cover member 17, the hole 16 is vacuum sealed by an evaporation sealing part 20a formed of the same metal as the evaporation layer 20 thus obtaining the yaw rate sensor 1 provided with a vacuum chip package 21.
WO/2017/104103 | CONNECTING STRUCTURE |
WO/1999/013343 | ACCELERATION SENSOR AND METHOD OF PRODUCING THE SAME |
JP2010271302 | MEMS SENSOR, METHOD OF MANUFACTURING MEMS SENSOR, AND ELECTRONIC APPARATUS |
NODA SHUJI
Next Patent: I/O TERMINAL, PACKAGE FOR CONTAINING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE