SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Title:

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP2007317839

Kind Code:

A

Abstract:

To provide a semiconductor device where pressure resistance and humidity resistance are improved, and also to provide a manufacturing method of the device.

In the semiconductor device, separation regions 13A and 13B are installed to surround an active region 19 where a transistor is formed. The separation regions 13A and the like continuously extend from an upper face to a lower face of a semiconductor substrate 11, and an insulator layer 14A consisting of a silicon oxide film etc. is formed inside. Since all sides of the semiconductor substrate 11 with the active region 19 formed therein can be covered with insulator, pressure resistance and humidity resistance of the semiconductor device is improved.

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Inventors:

TOJO JUNICHIRO

Application Number:

JP2006145196A

Publication Date:

December 06, 2007

Filing Date:

May 25, 2006

Export Citation:

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Assignee:

SANYO ELECTRIC CO

International Classes:

H01L29/06; H01L21/331; H01L21/336; H01L21/76; H01L29/47; H01L29/732; H01L29/78; H01L29/872

Domestic Patent References:

JP2001127149A	2001-05-11
JP2006513563A	2006-04-20
JP2005235859A	2005-09-02
JPH07263539A	1995-10-13

Attorney, Agent or Firm:

Takashi Okada

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