To provide a semiconductor device and a method for manufacturing the semiconductor device which enable micro fabrication by the use of SiC, and are excellent in ultra-low on-resistance and reliability.
The semiconductor device has: an SiC substrate, a first conductive type first SiC layer of a first main face thereof, a second conductive type first SiC region of the surface, a first conductive type second SiC region of the surface, a second conductive type third SiC region of a lower part thereof, a trench which penetrates the second SiC region and reaches the third SiC region, a gate insulating film, a gate electrode, an interlayer insulating film coating the gate electrode, a first electrode formed on the second SiC region on the trench side face and the interlayer insulating film, and containing a metal element selected from a group composed of Ni, Ti, Ta, Mo, and W, a second electrode formed on the third SiC region of a trench bottom and on the first electrode and containing Al, a first main electrode on the second electrode, and a second main electrode formed on a second main face of the SiC substrate.
SHINOHE TAKASHI
MIZUKAMI MAKOTO
| JP2009032921A | 2009-02-12 | |||
| JP2006135150A | 2006-05-25 | |||
| JPH10189969A | 1998-07-21 | |||
| JP2007207784A | 2007-08-16 | |||
| JPH08250586A | 1996-09-27 | |||
| JPH0324737A | 1991-02-01 |
| WO2009013886A1 | 2009-01-29 |
Tetsuma Ikegami
Akira Sudo