PURPOSE: To stabilize the operating characteristics of a second transistor by forming the second transistor into an active element layer isolated from a substrate to which a first transistor is shaped.
CONSTITUTION: A single crystal silicon film 9 is formed onto an oxide film 98. The base region 51 of a first transistor Q2 is shaped while the gate region 53 of a second transistor Q1 is formed into the single crystal silicon film 9. The emitter region 61 and collector contact region 62 of the first transistor Q2 are shaped while the source region 63 and drain region 64 of the second transistor Q1 are formed into the single crystal silicon film 9. That is, the second transistor Q1 for holding voltage is not shaped into a silicon substrate 1, and is formed onto the oxide film 98. Accordingly, the channel height of the second transistor Q1 is not varied by the emitter potential of the first N-P-N transistor Q2, thus acquiring stable current controllability and high breakdown strength.
ODA TAKESHI
YOSHIZAWA MASAO
TERAJIMA TOMOHIDE
YAMAGUCHI HIROSHI
