Title:
SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2016046535
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor element and a manufacturing method of the same, which can minimize overhead of a chip area while ensuring drive performance of transistors in regions different from each other.SOLUTION: A semiconductor element manufacturing method comprises the steps of: providing a substrate 100 including a first region R1, a second region R2 and a third region R3 between the first region and the second region; forming on the substrate in the first and second regions, first and second preliminary active patterns AP1a, AP2a, respectively, which project from the substrate; forming a mask pattern 160 for exposing the third region on the substrate; performing a first etching process which uses the mask pattern as an etching mask to form first and second active patterns from the first and second preliminary active patterns; and forming a gate structure on the substrate.SELECTED DRAWING: Figure 6B
Inventors:
BAEK SANG HOON
PARK JAE-HO
YANGSEOLUN
SONG TAE-JOONG
OHSANG-KYU
PARK JAE-HO
YANGSEOLUN
SONG TAE-JOONG
OHSANG-KYU
Application Number:
JP2015165001A
Publication Date:
April 04, 2016
Filing Date:
August 24, 2015
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L21/8244; H01L27/10; H01L27/11
Domestic Patent References:
| JP2011507308A | 2011-03-03 | |||
| JP2006156657A | 2006-06-15 | |||
| JP2010153899A | 2010-07-08 | |||
| JP2013197533A | 2013-09-30 |
Foreign References:
| US8198655B1 | 2012-06-12 | |||
| US20060046201A1 | 2006-03-02 |
Attorney, Agent or Firm:
Makoto Hagiwara
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