Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JPS60195980
Kind Code:
A
Abstract:
PURPOSE:To improve the integration by three-dimensional structure by forming other element directly on a semiconductor substrate, and forming a photoreceptor through a light shielding film on the upper layer, thereby preventing an erroneous operation by preventing the influence to the other element. CONSTITUTION:A function element of MOS field effect transistor 2 or other photoreceptor are formed on the main surface of a semiconductor substrate 1 made of silicon or the like, thereby forming an internal circuit A. An interlayer insulating film 3 made of SiO2 and a light shielding film 4 of aluminum film are formed. Photoreceptors D1-Dl are formed on the film 4. The photoreceptors are composed of a P type layer 6 made of amorphous silicon, I-type layer 7 and N type layer 8 as photodiodes. Electrodes 9 made of aluminum layer are formed, and the entirety is coated with the film 10 which passes the light. The light emitted to the photoreceptor D1 is shielded by the film 4, thereby effectively preventing the charge from generating in the internal circuit A or in the substrate 1 or the influence.
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Inventors:
KURODA KENICHI
Application Number:
JP5093684A
Publication Date:
October 04, 1985
Filing Date:
March 19, 1984
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L27/14; H01L31/10; H01L31/105; (IPC1-7): H01L27/14; H01L31/10
Attorney, Agent or Firm:
Akio Takahashi