To provide a semiconductor light-emitting element and a manufacturing method therefor.

A manufacturing method for a semiconductor light-emitting element comprises: a step of forming a light-emitting structure including a p-type electrode on an n-type GaN based substrate 22; a step of etching the entire surface of a bottom surface of the substrate until the thickness of the substrate in the initial state is reduced to a predetermined thickness in a state that the light-emitting structure including the p-type electrode is formed; and a step of forming an n-type electrode on the bottom surface of the substrate which has been etched to the predetermined thickness. Thus, the n-type electrode is formed on the bottom surface of the substrate that has no damage, so that the characteristics of a light-emitting element, particularly a semiconductor laser diode, can be improved.